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| transistor(npn) features ? high voltage transistor marking: m1f m aximum r a tings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 160 v v ceo collector - emitter voltage 140 v v ebo emitter - base voltage 6 v i c collector current 600 m a p c collector power dissipation 225 m w r ja thermal resistance from j u nction to a mbient 55 6 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 0.1m a , i e =0 160 v collector - emitter breakdown voltage v (br) c e o * i c = 1 ma, i b =0 140 v emitter - base breakdown voltage v (br)eb o i e = 0. 0 1m a , i c =0 6 v collector cut - off current i cbo v cb = 100 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 50 n a h fe (1) v ce = 5 v, i c = 1m a 60 h fe (2) v ce = 5 v, i c = 1 0 ma 60 250 dc current gain h fe (3) v ce = 5 v, i c = 50 m a 20 v ce(sat) 1 i c = 10m a, i b = 1 ma 0.15 v collector - emitter saturation voltage v ce(sat) 2 i c = 50m a, i b = 5 ma 0.25 v v b e(sat) 1 i c = 10m a, i b = 1 ma 1 v base - emitter saturation voltage v b e(sat) 2 i c = 50m a, i b = 5 ma 1.2 v * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 23 1. base 2. emitter 3. collector MMBT5550 1 date:2011/05 www.htsemi.com semiconductor jinyu
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